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| NPN Silicon Transistors with High Reverse Voltage High breakdown voltage q Low collector-emitter saturation voltage q Low capacitance q Complementary types: BFP 23, BFP 26 (PNP) q 1 32 BFP 22 BFP 25 Type BFP 22 BFP 25 Marking - Ordering Code (tape and reel) Q62702-F621 Q62702-F721 Pin Configuration 1 2 3 E B C Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) Rth JA Rth JC Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values BFP 22 200 200 6 Unit BFP 25 300 300 200 500 100 200 625 150 mW C mA V - 65 ... + 150 200 135 K/W 1) 2) For detailed information see chapter Package Outlines. Mounted on Al heat sink 15 mm x 25 mm x 0.5 mm. BFP 22 BFP 25 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage BFP 22 IC = 1 mA BFP 25 Collector-base breakdown voltage BFP 22 IC = 100 A BFP 25 Emitter-base breakdown voltage IE = 100 A Collector-base cutoff current VCB = 160 V VCB = 250 V VCB = 160 V, TA = 150 C VCB = 250 V, TA = 150 C Emitter-base cutoff current VEB = 4 V DC current gain IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 30 mA, VCE = 10 V1) BFP 22 BFP 25 BFP 22 BFP 25 IEB0 hFE 25 40 50 40 VCEsat - - VBEsat - - - - 0.4 0.5 0.9 - - - - - - - - V V(BR)CE0 200 300 V(BR)CB0 200 300 V(BR)EB0 ICB0 - - - - - - - - - - 100 100 20 20 100 nA nA A A Values typ. max. Unit V - - - - - - - - - - 6 nA - BFP 22 BFP 25 Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA BFP 22 BFP 25 Base-emitter saturation voltage1) IC = 20 A, IB = 2 mA AC characteristics Transition frequency IC = 20 mA, VCE = 10 V, f = 20 MHz Output capacitance VCB = 30 V, f = 1 MHz fT Cobo - - 70 1.5 - - MHz pF 1) Pulse test conditions: t 300 s, D 2 %. BFP 22 BFP 25 Total power dissipation Ptot = f (TA; TC) Operating range IC = f (VCE) D = 0, TA = 25 C Permissible pulse load RthJA = f (tp) Collector current IC = f (VBE) VCE = 10 V, TA = 25 C BFP 22 BFP 25 Collector cutoff current ICB0 = f (T) VCB = 160 V, 250 V DC current gain hFE = f (IC) VCE = 10 V, TA = 25 C Transition frequency fT = f (IC) VCE = 10 V, f = 20 MHz |
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